球差矫正透射电镜研究单层石墨烯的掺杂和边缘修饰（Aberration-corrected TEM study of single layer graphene doping and edge decoration）

张西祥 教授

阿卜杜拉国王科技大学、沙特阿拉伯（King Abdullah University of Science and Technology , Kingdom of Saudi Arabia）

颜世申 教授

2014-09-29 16:00

知新楼C座1111报告厅

Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by highenergy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.

In addition, the interaction between single noble metal atoms and graphene edges has also been investigated the low-voltage TEM. A collective motion of the Au atom and the nearby carbon atoms is observed in transition between energy-favorable configurations. Most trapping and detrapping processes are assisted by the dangling carbon atoms, which are more susceptible to knock-on displacements by electron irradiation. Thermal energy is lower than the activation barriers in transition among different energy-favorable configurations, which suggests electron-beam irradiation can be an efficient way of engineering the graphene edge with metal atoms.

[1]H. T. Wang,Q.X. Wang,Y. C. Cheng, K. Li, Y. B. Yao, Q. Zhang, C. Z. Dong, P. Wang, U. Schwingenschlogl, W. Yang and X. X. Zhang, Nanolett. 12, 141−144(23012).

[2]H. T. Wang, K. Li,Y. C. Cheng, Q.X. Wang, Y.B. Yao, U. Schwingenschlogl, X.X. Zhang and W. Yang, Nanoscale, 2012, 4, 2920

CURRICULUM VITAE

Dr. XIXIANG ZHANG

Division of Physical Science and Engineering

King Abdullah University of science and Technology

Saudi Arabia

Tel: +96628082332

E-mail:xixiang.zhang@kaust.edu.sa

PERSONAL DATA

First Name: XIXIANG Family Name: ZHANG

Sex: Male Citizenship: Hong Kong SAR China

ACADEMIC AND PROFESSIONAL QUALIFICATIONS

Ph. D.----1992,Universitat de Barcelona,Spain.

M. S.-----1986,Tianjin University,China.

BS--------1983,Tianjin University,China.

EMPLOYMENT AND PROFESSIONAL EXPERIENCE

· Professor, Division of Physical Science and Engineering, King Abdullah University of science and Technology

Jan. 2014---

· Research and Graduation Education, King Abdullah University of science and Technology

Aug. 2012-Feb. 2014

Director of Core Labs

· Research and Research, King Abdullah University of science and Technology

Sept.2008-

Manager of Core labs: 1) Nanofabrication; 2) Imaging –characterization, 3) Thin films

· Dept. of Phys., TheHong KongUniv.of Sci. and Tech., Aug. 1997- Aug. 2008

Assistant Professor/ Associate Professor/Professor

· Dept. de Fisica Fonamental, Universitat de Barcelona, Spain 1995-Aug.1997

Senior research scientist

· Dept. de Fisica Fonamental, Universitat de Barcelona, Spain,1/1994 ---12/994

Research Scientist

· Dept. de Fisica Fonamental, Universitat de Barcelona, Spain, 1/1993--12/1993

Research scientist: Fellowship Sabbatical from "Ministry of Education andScience,Spain"

· Dept. de Fisica Fonamental, Universitat de Barcelona, Spain, 1/1991- 12/1992

Research scientist: Fellowship from "Ministry of Education andScience,Spain"

· Dept. of Physics, Tianjin University, China, 1988-1990

Lecture

· Dept. of Physics,Tianjin University,China, 1986--1988

Assistant (teacher)

MERITS

a) Awards:

6. "Discovery and mechanism of LaFeSi based magnetocaloric materials , No.905- 2010-001" First Prize of Beijing City in Science and Technology, 2011.

"新型LaFeSi基等磁热效应材料的发现和磁热机理研究；项目编号905-2010-001"

2011年度北京市科学技术一等奖，

7. "Discovery and investigation of novel magnetocaloric effect materials,2012-Z-108- 2-03-R04"

State Natural Science Award (Second Class), 2012.

"新型磁热效应材料的发现和相关科学问题研究”

国家自然科学奖，二等，证书号：2012-Z-108- 2-03-R04

RESEARCH OUTPUT