报告题目:Handling the nature of organic semiconductors: From band structure study to its engineering by quasi-pinning effect of the Fermi level
报告人:Prof Nobuo UENO(上野信雄教授), Chiba University, Japan
邀请人:郝晓涛 辛倩
时间: 2016年12月6日(星期二) 15:30
地点: 光电所报告厅
报告人简介:
Prof Nobuo UENO
Director, London Office of Japan Society for the Promotion of Science (JSPS London)
Distinguished Professor and Professor Emeritus, Chiba University
Chair Professor, Soochow University
Councillor of the Futaba Electronics Memorial Foundation
Academic positions:
2016(May 1-) Director, London office, Japan Society for the Promotion Science
2014 (Apr.1-) Distinguished Professor of Chiba University,
Professor Emeritus of Chiba University, and special researcher of
Graduate School of Advanced Integration Science
1996-2014, Full Professor of Chiba University:
1989-1996, Associate Professor, Chiba University
1977-1988, Research Asociate, Lecturer, Chiba University
1984-1985 Research fellow of Alexander von Humboldt Foundation at HASYLAB, DESY, Hamburg, West Germany (Prof. E. E. Koch)
1976-1977, Post doctoral fellow of Japan Society for the Promotion of Science (JSPS) at Dept. of Applied Physics, Tohoku University (Prof. S. Kiyono)
2009-2012, Special assistant to the president of Chiba University
2009-2013, Director of Advanced Institute for Molecular Electronics Studies, Chiba University
Program leader (representative of Chiba University)
2003-2007,Leader of 21st Century Center-of-Excellence program (MEXT), “Frontiers of Super-Functionality Organic Devices”
2008-2012,Leader of Global Center-of-Excellence program (MEXT), “Advanced School of Organic Electronics”
2013,Leader of 卓越した大学院拠点形成“Takuetsu” program (MEXT)
Education
1976,PhD, Tohoku University ;
1973,Master,Tohoku University ;
1971,Bachelor,Shinshu University:
报告摘要:
The nature of organic semiconductors, which can explain difference between organic and inorganic semiconductors, is overviewed. Then electronic states studies using ultraviolet photoelectron spectroscopy are introduced in relation to charge and polaron transport properties in “organic devices”. We then discuss a method how to intentionally tune the Fermi level in the band gap, namely the charge injection barrier height, using the “quasi Fermi-level pinning” effect.