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铁电隧道结及异质结构的多场调控

发布日期:2018-08-16

报告题目:铁电隧道结及异质结构的多场调控

报告人:胡卫进 研究员

邀请人:田玉峰 副研究员

报告时间:2018815日 上午 10:00

报告地点:知新楼C1111

摘要:Ferroelectric/ferromagnetic tunnel junctions and heterostructures represent as new types of emerging non-volatile electronic memories, promising with high data storage density and low-power consumption. In this talk, I will introduce our recent works in this field since 2014, including the giant on/off ratio and optical reading of ferroelectric information in BiFeO3 based tunnel junctions, the colossal persistent photoconductivity achieved in ferroelectric/semiconductor (BiFeO3/Nb:SrTiO3) heterostructures, the voltage driven magnetization-reversal in BaTiO3 based multiferroelectric tunnel junctions, and finally the emerging ferroelectricity in 2D In2Se3 van der wals material. I would like to share some of our experience and insights on the electric, optical, and magnetic couplings in these nanostructure devices, which is directly related to their potential applications in memories, sensors and so on.



简历:胡卫进,男,中国科学院金属研究所副研究员,科学院百人计划C类候选人。胡卫进于20056月获哈尔滨工业大学工学学士学位, 201111月获中国科学院金属研究所工学博士学位。2008-2010年获国家留学基金资助于美国宾州州立大学物理系进行访问研究。201112月至201711月,先后在新加坡南洋理工大学物理系、沙特阿卜杜拉国王科技大学物理系开展博士后研究工作。201712月至今于中科院金属所担任副研究员。研究方向主要包括复杂氧化物薄膜的外延生长、相关微纳米异质结构和隧道结器件的制备及其磁电输运性能,以及探索它们在信息存储、光电探测等领域的应用。

近年来,以第一作者/通讯作者在Nature CommunicationsAdvanced Functional MaterialsNano LettersACS Applied Materials & InterfacesScientific Reports 等期刊发表文章。迄今共发表论文30余篇,他引1100余次,H因子18应邀为Nature Communications, Advanced Materials, ACS Applied Materials & Interfaces, AIP Advances, Organic Electronics, Transactions on Nanotechnology, Journal of Applied physics, Solid state communications等期刊评审文章。


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C. L. Lu*, W. J. Hu, Y. F. Tian, & T. Wu*, Appl. Phys. Rev. 2, 021304 (2015).

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