报告人：陈国瑞 博士  美国加州大学伯克利分校

时间：2019年1月11日上午10:00

地点：知新楼C座7层会议室

邀请人：陈峰 教授

报告摘要：

Mott insulator plays a central role in strongly correlated physics, where the repulsive Coulomb interaction dominates over the electron kinetic energy and leads to insulating states with one electron occupying each unit cell. In this talk, I will discuss the realization of a tunable Mott insulator in the ABC stacked trilayer graphene (TLG) and hexagonal boron nitride (hBN) heterostructure with a moiré superlattice. Unlike massless Dirac electrons in monolayer graphene, electrons in pristine ABC stacked TLG are characterized by quartic energy dispersion and large effective mass that are conducive for strongly correlated phenomena. The moiré superlattice in TLG/hBN heterostructures leads to narrow electronic minibands and allows for the observation of gate-tunable Mott insulator states at 1/4 and 1/2 fillings. In addition, signatures of superconductivity are observed at low temperature near the 1/4 filling Mott insulator state in the TLG/hBN heterostructures.

报告人简介：

陈国瑞，加州大学伯克利分校博士后。2010年本科毕业于bat365在线平台app，2016年博士毕业于复旦大学物理系并留校任博士后，2017年至今为美国加州大学伯克利分校物理系博士后。研究兴趣主要在高质量二维材料及其范德瓦尔异质结，尤其是石墨烯的量子输运及其光学性质。近年来在Nature Physics, Nature Materials, Nature Nanotechnology, PRL和Nano Letters等杂志期刊发表十多篇文章，被引用1000多次。