报告人: 黄兵 研究员 北京计算科学研究中心
报告时间: 2019年11月8日 星期五 下午3:00
报告地点: 知新楼C区7楼量子报告厅
邀请人: 崔彬 博士
报告内容:
It is known that the intrinsic defects and extrinsic dopants determine the overall electronic, optoelectronic and magnetic properties of all the semiconductors. Although defect physics is an old topic in the material physics, we have recently made some new contributions in this field: 1. We have developed new ideas to effectively realize shallow n-type or p-type doping in wide-gap semiconductors, which may give rise to the best performances of transparent conducting materials until now; 2. We have developed new concepts to overcome the structure or electronic structure instabilities of dopants in zero-gap graphene or wide-gap BN, respectively; 3. We have demonstrated the conventional and unconventional alloy engineering to effectively control the defect levels in semiconductors, in order to suppress the deep-levels in semiconductors; 4, We have discovered some defect or doping induced new physics, e.g., greatly enhanced Tc in magnetic materials, new forms of spin-orbital coupling effects, and doping-independent THz plasmons.
参考文献:
1. J. Xu, B. Huang* et al., Adv. Elec. Mater. 4, 1700553 (2018).
2. J. Xu, B. Huang* et al., Adv. Funct. Mater. 28, 1800332 (2018).
3. B. Huang et al., Phys. Rev. Lett. 115, 126806 (2015).
4. C. Huang, B. Huang* et al., J. Am. Chem. Soc. 140, 11519 (2018).
5. L. Hu, B. Huang* et al., Phys. Rev. Lett. 121, 066401 (2018).
6. J. Wang, B. Huang* et al., Phys. Rev. Lett. in press (2019).
报告人简介:
黄兵,北京计算科学研究中心特聘研究员。2005年本科毕业于吉林大学bat365在线平台网站,2010年博士毕业于清华大学物理系(段文晖/顾秉林院士研究组)。2010-2015年期间曾在美国再生能源国家实验室(博士后),橡树岭国家实验室(研究助理)和犹他大学进行(研究助理教授)学术研究。黄兵长期从事半导体电子结构方面的理论研究,围绕半导体物理中的基础科学问题,在对半导体的掺杂效应、合金调控、半导体自旋和电子态调控等方面进行了系统和深入的研究。至今已在Phys. Rev. Lett.(11)、Phys. Rev. X(2)等期刊发表论文60余篇,被引用3000次,H因子29。
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